Daalụ maka ileta Nature.com.Ị na-eji ụdị ihe nchọgharị nwere oke nkwado CSS.Maka ahụmịhe kachasị mma, anyị na-akwado ka ị jiri ihe nchọgharị emelitere (ma ọ bụ gbanyụọ ọnọdụ ndakọrịta na Internet Explorer).Na mgbakwunye, iji hụ na nkwado na-aga n'ihu, anyị na-egosi saịtị na-enweghị ụdị na Javascript.
Na-egosiputa carousel nke slide atọ n'otu oge.Jiri bọtịnụ gara aga na nke na-esote ịgafe na slide atọ n'otu oge, ma ọ bụ jiri bọtịnụ mmịfe na njedebe ka ịgafe slide atọ n'otu oge.
N'ebe a, anyị na-egosipụta njirimara mmiri mmiri na-ebute gallium, nke a na-ahụ anya na nke a na-ahọrọ na mbara igwe nwere njiri elu microscale.Alloys metal mmiri mmiri dabere na Gallium bụ ihe dị ịtụnanya nwere nnukwu esemokwu elu.Ya mere, ọ na-esiri ike ịmepụta ha n'ime ihe nkiri dị mkpa.E nwetara mmiri mmiri zuru ezu nke eutectic alloy nke gallium na indium n'elu ọla kọpa microstructured na ọnụnọ HCl vapors, bụ nke wepụrụ oxide eke site na alloy metal mmiri mmiri.A kọwara wetting a ọnụ ọgụgụ dabere na ụdị Wenzel na usoro osmosis, na-egosi na nha microstructure dị oke mkpa maka ịcha mmiri nke osmosis nke ọma.Na mgbakwunye, anyị na-egosi na enwere ike ịhọpụta mmiri mmiri n'otu oge n'akụkụ mpaghara microstructured n'elu igwe iji mepụta ụkpụrụ.Usoro a dị mfe na-ekpuchi ma na-akpụzi ígwè mmiri mmiri n'elu nnukwu ebe na-enweghị ike mpụga ma ọ bụ njikwa mgbagwoju anya.Anyị egosila na mkpụrụ mmiri igwe nwere ụkpụrụ na-ejigide njikọ eletrik ọbụlagodi mgbe a gbatịchara ya na mgbe usoro ịgbatị gbatịchara ugboro ugboro.
Gallium based liquid metal alloys (GaLM) adọtala nlebara anya nke ukwuu n'ihi njirimara ha mara mma dị ka ebe mgbaze dị ala, nrụpụta eletrik dị elu, viscosity dị ala na eruba, obere nsị na nrụrụ dị elu1,2.Gallium dị ọcha nwere ebe mgbaze nke ihe dịka 30 Celsius C, ma mgbe ejikọtara ya na ihe eutectic mejupụtara ya na ụfọdụ ọla dị ka In na Sn, ebe mgbaze dị n'okpuru okpomọkụ.GaLM abụọ dị mkpa bụ gallium indium eutectic alloy (EGaIn, 75% Ga na 25% N'ịdị arọ, ebe mgbaze: 15.5 Celsius C) na gallium indium tin eutectic alloy (GaInSn ma ọ bụ galinstan, 68.5% Ga, 21.5% In, na 10). % tin, ebe agbaze: ~ 11 Celsius) 1.2.N'ihi nrụgharị eletrik ha na mmiri mmiri, a na-enyocha GaLM nke ọma dị ka ụzọ eletrọnịkị siri ike ma ọ bụ deformable maka ngwa dị iche iche, gụnyere eletrọnịkị3,4,5,6,7,8,9 ma ọ bụ ihe mmetụta gbagọrọ agbagọ 10, 11, 12. , 13, 14 ma na-eduga 15, 16, 17. Ịmepụta ngwaọrụ ndị dị otú ahụ site na ntinye, mbipụta na nhazi site na GaLM chọrọ ihe ọmụma na njikwa nke ihe ndị dị n'ime ihu nke GaLM na ihe ndị dị n'okpuru ya.GaLM nwere esemokwu elu dị elu (624 mNm-1 maka EGaIn18,19 na 534 mNm-1 maka Galinstan20,21) nke nwere ike ime ka ha sie ike ijikwa ma ọ bụ gbanwee.Nhazi nke eriri gallium oxide nke ala dị n'elu GaLM n'okpuru ọnọdụ gburugburu na-enye shei na-eme ka GaLM kwụsie ike n'ụdị na-abụghị nke okirikiri.Ngwongwo a na-enye ohere ka ebipụta GaLM, tinye ya n'ime microchannels, ma mee ya na nkwụsi ike nke ihu nke oxides19,22,23,24,25,26,27 nwetara.Shei siri ike oxide na-enyekwara GaLM aka ịrapara n'ọtụtụ ebe dị larịị, mana na-egbochi ọla viscosity dị ala ka ọ na-asọ n'efu.Mgbasa GaLM n'ọtụtụ ebe na-achọ ike imebi oxide shell28,29.
Enwere ike iwepụ shells oxide na, dịka ọmụmaatụ, acids siri ike ma ọ bụ ntọala.Na enweghị oxides, ụdị GaLM na-adaba n'ihe fọrọ nke nta ka ọ bụrụ ebe niile n'ihi nnukwu esemokwu elu ha, mana enwere ihe ndị ọzọ: GaLM wet metal substrates.Ga na-emepụta njikọ ọla na ọla ndị ọzọ site na usoro a maara dị ka "wetting reactive"30,31,32.A na-enyochakarị mmiri mmiri a na-emeghachi omume na enweghị oxides elu iji mee ka kọntaktị metal na metal dị mfe.Agbanyeghị, ọbụlagodi na oxides obodo dị na GaLM, a kọwala na kọntaktị metal-na-metal na-etolite mgbe oxides na-agbaji na kọntaktị nwere oke igwe dị larịị29.Wetting na-arụ ọrụ na-arụpụta akụkụ kọntaktị dị ala yana ezigbo wetting nke ọtụtụ ihe ndị na-emepụta metal33,34,35.
Ka ọ dị ugbu a, a na-eme ọtụtụ ọmụmụ banyere iji ihe dị mma na-eme ka mmiri na-arụ ọrụ nke GaLM jiri ọla na-emepụta ụkpụrụ GaLM.Dịka ọmụmaatụ, etinyela GaLM n'ụdị egwu igwe siri ike nwere ụkpụrụ site n'itinye, ịtụgharị, ịgbasa, ma ọ bụ nkpuchi ndò34, 35, 36, 37, 38. Wetting nke GaLM na ọla siri ike na-enye ohere GaLM mepụta ụkpụrụ kwụsiri ike na nke akọwapụtara nke ọma.Otú ọ dị, elu elu esemokwu nke GaLM na-egbochi nguzobe nke ukwuu edo edo na fim ọbụna na metal substrates.Iji dozie okwu a, Lacour et al.kọrọ usoro maka imepụta ihe nkiri GaLM dị larịị, dịkwa larịị n'ofe ebe buru ibu site na ịpụpụ gallium dị ọcha n'ime ihe ndị nwere ihe mkpuchi ọla edo37,39.Usoro a chọrọ ntinye oghere, nke na-adị ngwa ngwa.Na mgbakwunye, anaghị anabatakarị GaLM maka ngwaọrụ ndị dị otú ahụ n'ihi mwepu nwere ike ime40.Evaporation na-etinyekwa ihe ahụ na mkpụrụ, ya mere a chọrọ ụkpụrụ iji mepụta ụkpụrụ ahụ.Anyị na-achọ ụzọ anyị ga-esi mepụta ihe nkiri GaLM dị ụtọ site n'ichepụta njiri metal topographic nke GaLM na-agba mmiri ozugbo na nhọrọ na enweghị oxides eke.N'ebe a, anyị na-akọ maka wet mmiri na-akpaghị aka nke EGaIn na-enweghị oxide (nke a na-ahụkarị GaLM) site na iji akparamagwa wet pụrụ iche na mpempe ígwè ahaziri fotolithographically.Anyị na-emepụta ihe owuwu elu kọwapụtara na fotolithographically n'ọkwa micro iji mụọ nhụsianya, si otú a na-achịkwa wet nke ọla mmiri mmiri na-enweghị oxide.A na-akọwa njirimara wetting ka mma nke EGaIn na mbara igwe microstructured site na nyocha ọnụọgụ dabere na ụdị Wenzel na usoro impregnation.N'ikpeazụ, anyị na-egosipụta nnukwu nkwụnye ego na nhazi nke EGaIn site na ntinye onwe onye, ​​​​na-akpaghị aka na nke a na-ahọrọ na mmiri n'elu ebe a na-etinye ígwè na microstructured.Eletrọd tensile na ihe nhụsianya na-etinye ihe owuwu EGaIn ka ewepụtara dị ka ngwa nwere ike.
Absorption bụ ụgbọ njem capillary nke mmiri mmiri na-abanye n'elu ederede 41, nke na-eme ka mgbasa nke mmiri mmiri dịkwuo mfe.Anyị nyochaa omume wetting nke EGaIn na metal microstructured na-ebupụta na HCl vepo (Fig. 1).A họọrọ ọla kọpa dị ka ígwè maka elu dị n'okpuru ya. N'elu ọla kọpa dị larịị, EGaIn gosipụtara akụkụ kọntaktị dị ala nke <20 ° n'ihu ikuku HCl, n'ihi wetting reactive31 (Fig. 1). N'elu ọla kọpa dị larịị, EGaIn gosipụtara akụkụ kọntaktị dị ala nke <20 ° n'ihu ikuku HCl, n'ihi wetting reactive31 (Fig. 1). На плоских медных поверхностях EGaIn показал низкий краевой угол <20° тельный рисунок 1). N'elu ọla kọpa dị larịị, EGaIn gosipụtara nkuku kọntaktị dị ala <20° n'ihu ikuku HCl n'ihi reactive wetting31 (Mgbakwunye 1).在平坦的铜表面上。在平坦的铜表面上，由于反应润湿，EgaIn在存在HCl На плоских медных поверхностях EGaIn демонстрирует низкие краевые углы <20 ° в присутствии паров HCl олнительный рисунок 1). N'elu ọla kọpa dị larịị, EGaIn na-egosipụta akụkụ kọntaktị dị ala <20° n'ihu ikuku HCl n'ihi wetting reactive (Nkọwa mgbakwunye 1).Anyị tụrụ akụkụ nso nso nke EGaIn na nnukwu ọla kọpa yana na fim ọla kọpa etinyebere na polydimethylsiloxane (PDMS).
a Columnar (D (dayameta) = l (anya) = 25 µm, d (anya n'etiti ogidi) = 50 µm, H (ịdị elu) = 25 µm) na pyramidal (obosara = 25 µm, elu = 18 µm) microstructures na Cu. / PDMS substrates.b Mgbanwe na-adabere na oge na akụkụ kọntaktị n'elu ala dị larịị (na-enweghị microstructures) na usoro nke ogidi na pyramid nwere PDMS nwere ọla kọpa.c, d Interval ndekọ nke (c) n'akụkụ anya na (d) elu ele nke EGaIn wetting n'elu na ogidi na ọnụnọ nke HCl vapor.
Iji nyochaa mmetụta nke topography na wetting, PDMS substrates na a columnar na pyramidal ụkpụrụ a kwadebere, nke ọla kọpa na-edebe na titanium adhesive oyi akwa (Fig. 1a).E gosiputara na e jiri ọla kọpa kpuchie elu microstructured nke PDMS n'ụzọ dabara adaba (Fig 2).Akuku kọntaktị dabere na oge nke EGaIn na PDMS nwere ụkpụrụ na atụmatụ ọla kọpa (Cu/PDMS) ka egosiri na fig.1b.Akụkụ kọntaktị nke EGaIn na ọla kọpa/PDMS nwere ụkpụrụ na-adaba na 0 ° n'ime ~ 1 min.Enwere ike iji Wenzel equation ({{{\rm{cos}}}}}}\,{\theta}_{{rough}}=r\,{{{rough}}}}},{{{rough}}=r\,{{{{{ \rm{cos}}}}}\,{\theta}_{0}\), ebe \({\theta}_{{rough}}\) na-anọchi anya akụkụ kọntaktị nke elu ahụ siri ike, \ (r) \) Ọdịmma dị n'elu (= ezigbo mpaghara/mpaghara pụtara) na akụkụ kọntaktị n'ụgbọelu \({\theta}_{0}\).Nsonaazụ nke wetting EGaIn na-eme ka ọ dị mma na ụdị Wenzel, ebe ọ bụ na ụkpụrụ r maka azụ na pyramidal na-ebupụta bụ 1.78 na 1.73, n'otu n'otu.Nke a pụtakwara na dobe EGaIn dị n'elu ihe atụ ga-abanye n'ime oghere nke enyemaka dị n'okpuru.Ọ dị mkpa iburu n'obi na a na-emepụta ihe nkiri dị larịị nke edobere na nke a, n'ụzọ dị iche na ikpe EGaIn n'elu ebe a na-adịghị ahazi (Mgbakwunye Fig. 1).
Site na fig.1c,d (Ihe nkiri mgbakwunye 1) enwere ike ịhụ na mgbe 30 s, ka akụkụ kọntaktị pụtara ìhè na-erute 0 Celsius, EGaIn na-amalite ịgbasa n'ihu n'akụkụ ọnụ nke dobe ahụ, nke sitere na absorption (Mgbakwunye Movie 2 na mgbakwunye). Foto 3).Ọmụmụ ihe ọmụmụ gara aga banyere ebe dị larịị jikọtara ọnụ ọgụgụ oge nke mmiri mmiri na-emeghachi omume na mgbanwe site na inertial wetting viscous.Ogo nke ala ahụ bụ otu n'ime isi ihe na-achọpụta ma ọ bụrụ na ị na-eme onwe ya.Site n'ịtụle ike elu tupu na mgbe imbibition sitere na echiche nke thermodynamic, a na-enwetara akụkụ kọntaktị dị egwu \({\theta}_{c}\) nke imbibition (lee Mkparịta ụka mgbakwunye maka nkọwa).A kọwapụtara nsonaazụ \({\theta}_{c}\) dị ka \({{{({\rm{cos)))))))\,{\theta}_{c}=(1-{\ phi } _{S})/(r-{\phi}_{S})\) ebe \({\phi}_{s}\) na-anọchi anya akụkụ dị nta n'elu akwụkwọ ozi na \(r\) ) na-anọchi anya ala adịghị mma. Imbibition nwere ike ime mgbe \({\theta }_{c}\) > \({\theta }_{0}\), ya bụ, akụkụ kọntaktị n'elu ala dị larịị. Imbibition nwere ike ime mgbe \({\theta }_{c}\) > \({\theta }_{0}\), ya bụ, akụkụ kọntaktị n'elu ala dị larịị. Впитывание может происходить, когда \ ({\ theta } _ {c} \) > \ ({\ theta} _ {0} \), т.e.котактный угол на плоской поверхности. Mwepu nwere ike ime mgbe \({\theta }_{c}\) > \({\theta }_{0}\), ya bụ akụkụ kọntaktị n'elu ala dị larịị.当\({\theta }_{c}\) > \({\theta }_{0}\) ，即平面上的接触角时，会发生吸吸。当\({\theta }_{c}\) > \({\theta }_{0}\) ，即平面上的接触角时，会发生吸吸。 Всасывание происходит, когда \ ({\ theta} _ {c} \) > \ ({\ theta} _ {0} \), контактный угол на плоскости. Ọkpụkpụ na-eme mgbe \({\theta }_{c}\)> \({\theta }_{0}\), akụkụ kọntaktị n'ụgbọelu.N'ihi na a na-agbakọ ihe n'elu ala ndị e dechara, \(r\) na \({\phi}_{s}\) bụ \(1+\{(2\pi {RH})/{d}^{2} } \ ) na \(\pi {R}^{2}/{d}^{2}\), ebe \(R\) na-anọchi anya radius kọlụm, \(H\) na-anọchi anya ịdị elu kọlụm, na \ ( d \) bụ ebe dị anya n'etiti etiti ogidi abụọ (Fig 1a).N'ihi na post-ahaziri elu na fig.1a, akụkụ \({\theta}_{c}\) bụ 60°, nke kariri ụgbọ elu \({\theta}_{0}\) (~25°) na HCl vapor Oxide-free EGaIn na Cu/PDMS.Ya mere, ụmụ irighiri mmiri EGaIn nwere ike ịbata n'elu ebe nchekwa ọla kọpa ahaziri ahazi na Fig. 1a n'ihi nnabata.
Iji nyochaa mmetụta nke topographic size nke ụkpụrụ na wetting na absorption nke EGaIn, anyị dịgasị iche iche nke ogidi ọla kọpa.Na fig.2 na-egosi akụkụ kọntaktị na nnabata nke EGaIn na mkpụrụ ndị a.Ebe dị anya l n'etiti ogidi ndị ahụ hà nhata na dayameta nke ogidi D na sitere na 25 ruo 200 μm.Ogo nke 25µm na-adịgide adịgide maka ogidi niile.\({\theta}_{c}\) na-ebelata site n'ịba ụba nke kọlụm (Table 1), nke pụtara na nnabata adịghị adịkarị na mkpụrụ nwere ogidi ndị buru ibu.Maka nha niile nwalere, \({\theta}_{c}\) karịrị \({\theta}_{0}\) ma na-atụ anya wicking.Otú ọ dị, a na-ahụkarị absorption maka ihe ndị e depụtara n'ihu na l na D 200 µm (Fig 2e).
Akuku kọntaktị dabere na oge nke EGaIn na elu Cu / PDMS nwere ogidi nke nha dị iche iche mgbe ekpughere ya na vapor HCl.b–e elu na n'akụkụ echiche nke EGaIn wetting.b D = l = 25 µm, r = 1.78.na D = l = 50 μm, r = 1.39.dD = l = 100 µm, r = 1.20.eD = l = 200 µm, r = 1.10.Ọkwa niile nwere ịdị elu nke 25 µm.Esere foto ndị a opekata mpe nkeji iri na ise ka ekpughere ya na vapor HCl.Mmụba mmiri na EGaIn bụ mmiri sitere na mmeghachi omume n'etiti gallium oxide na HCl vapor.Ogwe ọnụ ọgụgụ niile dị na (b - e) bụ 2 mm.
Usoro ọzọ maka ịchọpụta ohere nke ịmịnye mmiri mmiri bụ nhazi nke mmiri mmiri n'elu mgbe etinyere ụkpụrụ ahụ.Kurbin et al.A kọwawo na mgbe (1) ọkwa dị elu nke ọma, ụmụ irighiri mmiri ga-ejupụta n'elu ihe atụ;(2) ebe dị n'etiti ogidi ndị ahụ dị ntakịrị;na (3) kọntaktị n'akuku nke mmiri mmiri n'elu bụ nke ọma obere42.Ọnụọgụgụ \({\theta}_{0}\) nke mmiri dị n'ụgbọelu nwere otu ihe eji eme ihe ga-abụrịrị ihe na-erughị ala kọntaktị dị mkpa maka pinning, \({\theta}_{c,{pin)) } \ ), maka nnabata na-enweghị pinning n'etiti posts, ebe \({\theta}_{c,{pin}}={{{{\rm{arctan}}}}} (H/\big \{ ( \ sqrt {2}-1)l\big\})\) (lee mkparịta ụka ndị ọzọ maka nkọwa).Uru nke \({\theta}_{c,{pin}}\) dabere na nha ntụtụ (Table 1).Kpebisie ike na oke enweghị nha L = l/H iji kpee ikpe ma nnabata ahụ ọ̀ pụtara.Maka nnabata, L ga-abụrịrị ihe na-erughị ọkọlọtọ ọnụ ụzọ, \({L}_{c}\) = 1/\(\big\{\big(\sqrt{2}-1\big){{\tan} } {\ theta}_{{0}}\large\}\).Maka EGaIn \ (({\theta}_{0}={25}^{\circ})\) na mkpụrụ ọla kọpa \({L}_{c}\) bụ 5.2.Ebe ọ bụ na kọlụm L nke 200 μm bụ 8, nke dị ukwuu karịa uru nke \ ({L}_{c}\), nnabata EGaIn adịghị eme.Iji nwalekwuo mmetụta nke geometry, anyị hụrụ onwe-priming nke dị iche iche H na l (Mgbakwunye 5 na Mgbakwunye Table 1).Nsonaazụ kwekọrịtara nke ọma na mgbako anyị.Ya mere, L na-atụgharị ka ọ bụrụ amụma dị irè nke absorption;Mmiri mmiri metal na-akwụsị ịmịkọrọ n'ihi pinning mgbe anya n'etiti ogidi ndị dịtụ nnukwu tụnyere ịdị elu nke ogidi.
Enwere ike kpebisie ike wettability dabere na ihe mejupụtara nke mkpụrụ ahụ.Anyị nyochara mmetụta nke ihe mejupụtara elu na wetting na absorption nke EGaIn site n'itinye ego Si na Cu na ogidi na ụgbọ elu (Mgbakwunye Fig. 6).Akụkụ kọntaktị EGaIn na-ebelata site na ~ 160 ° ruo ~ 80 ° ka elu ọnụọgụ abụọ Si / Cu na-abawanye site na 0 ruo 75% na ọdịnaya ọla kọpa dị larịị.Maka elu 75% Cu/25% Si, \({\theta}_{0}\) bụ ~80°, nke dabara na \({L}_{c}\) kwekọrọ na 0.43 dịka nkọwapụta dị n'elu. .N'ihi na kọlụm l = H = 25 μm na L ha nhata 1 karịrị ọnụ ụzọ \({L}_{c}\), 75% Cu/25% Si elu ka emechara ụkpụrụ adịghị etinye ya n'ihi enweghị ike imegharị ya.Ebe ọ bụ na akụkụ kọntaktị nke EGaIn na-abawanye na mgbakwunye nke Si, a chọrọ H dị elu ma ọ bụ ala ala iji merie pinning na impregnation.Ya mere, ebe ọ bụ na akụkụ kọntaktị (ie \({\theta}_{0}\)) dabere na kemịkalụ nke elu, ọ nwekwara ike ikpebi ma imbibition na-eme na microstructure.
EGaIn absorption na ọla kọpa/PDMS nwere ụkpụrụ nwere ike mee ka igwe mmiri mee ka ọ bụrụ ụkpụrụ bara uru.Iji nyochaa ọnụ ọgụgụ kacha nta nke ahịrị kọlụm na-akpata imbibition, a na-ahụ ihe ndị na-emepụta mmiri nke EGaIn na Cu / PDMS nwere ahịrị post-usoro nwere nọmba ahịrị kọlụm dị iche iche site na 1 ruo 101 (Fig 3).Wetting na-emekarị na mpaghara post-patterning.A na-ahụta wicking EGaIn nke ọma na ogologo wicking na-abawanye na ọnụọgụ nke ahịrị ogidi.Absorption fọrọ nke nta ka ọ bụrụ mgbe enwere posts nwere ahịrị abụọ ma ọ bụ obere.Nke a nwere ike ịbụ n'ihi mmụba capillary.Maka nnabata na-eme na usoro kọlụm, a ghaghị imeri nrụgide capillary nke n'ihi curvature nke isi EGaIn (Mgbakwunye 7).Na-eche na radius nke curvature nke 12.5 µm maka otu ahịrị EGaIn isi nwere ụkpụrụ kọlụm, nrụgide capillary bụ ~ 0.98 atm (~ 740 Torr).Nrụgide Laplace a dị elu nwere ike igbochi wet nke nnabata nke EGaIn kpatara.Ọzọkwa, ahịrị ole na ole nke ogidi nwere ike ibelata ike nnabata nke bụ n'ihi ọrụ capillary n'etiti EGaIn na ogidi.
a Drops nke EGaIn na Cu/PDMS ahaziri ya na ụkpụrụ nke obosara dị iche iche (w) na ikuku (tupu ikpughe na HCl vapor).Ahịrị nke racks malite n'elu: 101 (w = 5025 µm), 51 (w = 2525 µm), 21 (w = 1025 µm), na 11 (w = 525 µm).b Ntuziaka ntuziaka nke EGaIn na (a) mgbe ekpughere ya na vapor HCl maka 10 min.c, d Wetting nke EGaIn na Cu/PDMS nwere usoro kọlụm (c) ahịrị abụọ (w = 75 µm) na (d) otu ahịrị (w = 25 µm).Ewere foto ndị a nkeji iri ka ekpughere ya na vapo HCl.Ogwe ọnụ ọgụgụ na (a, b) na (c, d) bụ 5 mm na 200 µm, n'otu n'otu.Àkú ndị dị na (c) na-egosi curvature nke isi EGaIn n'ihi nnabata.
Ntinye nke EGaIn na Cu / PDMS post-patterned na-enye ohere ịmepụta EGaIn site na wetting nhọrọ (Fig 4).Mgbe a na-etinye dobe nke EGaIn n'ebe a na-emepụta ihe ma kpughee ya na HCl vapor, EGaIn dobe na-adaba na mbụ, na-eme obere akụkụ kọntaktị dị ka acid na-ewepụ ọnụ ọgụgụ.Na-esote, nnabata na-amalite site na nsọtụ nke dobe ahụ.Enwere ike nweta nhazi nke mpaghara buru ibu site na centimita-ọnụ ọgụgụ EGaIn (Fig. 4a, c).Ebe ọ bụ na absorption na-eme naanị n'elu topographic elu, EGaIn naanị na-eme ka ebe a na-eme ihe na-eme ka ọ dị jụụ ma ọ fọrọ nke nta ka ọ kwụsị ịcha mmiri mgbe ọ rutere n'elu ala.N'ihi ya, a na-ahụ oke dị nkọ nke ụkpụrụ EGaIn (Fig. 4d, e).Na fig.4b na-egosi otú EGaIn si abanye n'ógbè ahụ na-adịghị edozi, karịsịa na gburugburu ebe EGaIn droplet e debere na mbụ.Nke a bụ n'ihi na dayameta kacha nta nke ụmụ irighiri mmiri EGaIn ejiri mee ihe n'ọmụmụ ihe a karịrị obosara nke mkpụrụedemede ndị e depụtara.Edobere mkpọda EGaIn na saịtị ụkpụrụ site na ịgbanye ntuziaka site na agịga 27-G na sirinji, na-ebute ọdịda nwere oke opekata mpe 1 mm.Enwere ike idozi nsogbu a site na iji obere ntụpọ EGaIn.N'ozuzu, foto 4 na-egosi na e nwere ike ime ka mmiri mmiri nke EGaIn pụta ma duzie ya gaa n'elu ebe a na-emepụta ihe.E jiri ya tụnyere ọrụ gara aga, usoro mmiri a na-adị ngwa ngwa ma ọ dịghị ike mpụga achọrọ iji nweta mmiri mmiri zuru oke (Table 2).
akara nke mahadum, leta b, c n'ụdị ọkụ ọkụ.A na-eji ọtụtụ kọlụm kpuchie mpaghara ahụ na-amị amị na D = l = 25 µm.d, ihe oyiyi ọgịrịga abawanyela na e (c).Ogwe ọnụ ọgụgụ na (a-c) na (d, e) bụ 5 mm na 500 µm, n'otu n'otu.Na (c-e), obere ụmụ irighiri mmiri dị n'elu mgbe mgbasa ozi gachara ghọọ mmiri n'ihi mmeghachi omume n'etiti gallium oxide na HCl vapor.Enweghị mmetụta dị ịrịba ama nke nhazi mmiri na wetting ahụghị.A na-ewepụ mmiri ngwa ngwa site na usoro ihicha dị mfe.
N'ihi ọdịdị mmiri mmiri nke EGaIn, EGaIn mkpuchi Cu / PDMS (EGaIn/Cu/PDMS) nwere ike iji mee ihe maka electrodes na-agbanwe ma na-agbatị.Ọgụgụ 5a tụlere mgbanwe nguzogide nke Cu/PDMS mbụ na EGaIn/Cu/PDMS n'okpuru ibu dị iche iche.Nkwụsị nke Cu / PDMS na-ebili nke ọma na esemokwu, ebe nkwụsị nke EGaIn / Cu / PDMS na-anọgide na-adị ala.Na fig.5b na d gosi onyonyo SEM na data EMF kwekọrọ nke raw Cu/PDMS na EGaIn/Cu/PDMS tupu na mgbe ngwa voltaji gasịrị.Maka Cu/PDMS adịghị emebi emebi, nrụrụ nwere ike ịkpata mgbawa na ihe nkiri Cu siri ike nke edobere na PDMS n'ihi enweghị ngbanwe.N'ụzọ dị iche, maka EGaIn/Cu/PDMS, EGaIn ka na-eyiri mkpụrụ osisi Cu/PDMS nke ọma ma na-ejigide ọkụ eletrik na-enweghị mgbawa ọ bụla ma ọ bụ nrụrụ dị ịrịba ama ọbụna mgbe etinyere eriri.Ihe omuma EDS gosiputara na gallium na indium sitere na EGaIn ka ekesara n'otu n'otu na ngwa Cu/PDMS.Ọ bụ ihe kwesịrị ịrịba ama na ọkpụrụkpụ nke ihe nkiri EGaIn bụ otu ma tụnyere ịdị elu nke ogidi. A na-akwadokwa nke a site na nyocha nke topographical ọzọ, ebe ọdịiche dị n'etiti ọkpụrụkpụ nke ihe nkiri EGaIn na ịdị elu nke post bụ <10% (Mgbakwunye 8 na tebụl 3). A na-akwadokwa nke a site na nyocha nke topographical ọzọ, ebe ọdịiche dị n'etiti ọkpụrụkpụ nke ihe nkiri EGaIn na ịdị elu nke post bụ <10% (Mgbakwunye 8 na tebụl 3). Это также подтверждается . A na-akwadokwa nke a site na nyocha nke topographical ọzọ, ebe ọdịiche dị n'etiti ihe nkiri EGaIn na ịdị elu kọlụm bụ <10% (Mgbakwunye 8 na tebụl 3).进一步的形貌分析也证实了这一点，其中EGaIn 3) <10% Это было подверждено дальнейшим топографическим анализом й столба составляла <10% (дополнительный рис. 8 na таблица 3). Ekwupụtakwara nke a site na nyocha nke topographical ọzọ, ebe ọdịiche dị n'etiti nha ihe nkiri EGaIn na ịdị elu kọlụm bụ <10% (Mgbakwunye 8 na tebụl 3).Wetting nke a na-achọsi ike na-enye ohere ka a na-achịkwa ọkpụrụkpụ nke mkpuchi EGaIn nke ọma ma nọgide na-eguzosi ike n'elu ebe buru ibu, nke na-esiwanye ike n'ihi ọdịdị mmiri ya.Ọnụọgụ 5c na e tụnyere conductivity na iguzogide nrụrụ nke mbụ Cu/PDMS na EGaIn/Cu/PDMS.Na ngosi ahụ, ọkụ ọkụ na-agbanye mgbe ejikọtara ya na Cu/PDMS na-emetụghị aka ma ọ bụ EGaIn/Cu/PDMS electrodes.Mgbe agbatị Cu/PDMS adịghị emebi emebi, LED na-agbanyụ.Otú ọ dị, EGaIn/Cu/PDMS electrodes nọgidere na-ejikọta ya na eletrik ọbụna n'okpuru ibu, na ọkụ ọkụ ọkụ na-ebelata ntakịrị n'ihi ụbara nguzogide electrode.
mgbanwe mgbanwe ngbanwe nke ọma na ibu ibu na Cu/PDMS na EGaIn/Cu/PDMS.b, d SEM onyogho na ume dispersive X-ray spectroscopy (EDS) analysis tupu (n'elu) na mgbe (ala) polydiplexes kwajuru na (b) Cu / PDMS na (d) EGaIn/Cu/methylsiloxane.c, e LEDs jikọtara na (c) Cu / PDMS na (e) EGaIn / Cu / PDMS tupu (elu) na mgbe (ala) na-agbatị (~ 30% nrụgide).Ogwe ọnụ ọgụgụ dị na (b) na (d) bụ 50 µm.
Na fig.6a na-egosi nguzogide EGaIn / Cu / PDMS dị ka ọrụ nke nje site na 0% ruo 70%.Mmụba na mgbake nke nguzogide dị nhata na nrụrụ, nke dị na nkwekọrịta dị mma na iwu Pouillet maka ihe ndị na-adịghị agwụ agwụ (R / R0 = (1 + ε) 2), ebe R bụ nkwụsị, R0 bụ nkwụsị mbụ, ε bụ nje 43. Ọmụmụ ihe ndị ọzọ egosila na mgbe a na-agbatị, ihe ndị siri ike na mmiri mmiri nwere ike ịhazi onwe ha ma na-ekesa nke ọma na njikọta ka mma, si otú ahụ na-ebelata mmụba na ịdọrọ 43, 44. N'ime ọrụ a, Otú ọ dị, onye nduzi bụ> 99% mmiri mmiri metal site na olu ebe ọ bụ na ihe nkiri Cu dị nanị 100 nm. N'ime ọrụ a, Otú ọ dị, onye nduzi bụ> 99% mmiri mmiri metal site na olu ebe ọ bụ na ihe nkiri Cu dị nanị 100 nm. Одnako в эtoy rabotete provodnyk sostoyt из > 99% жидко метала по бъему, так как пленки Cu имеют тулься . Otú ọ dị, n'ime ọrụ a, onye nduzi nwere> 99% mmiri mmiri metal site na olu, ebe ọ bụ na ihe nkiri Cu dị naanị 100 nm.然而，在这项工作中，由于Cu 薄膜只有100 nm 厚，因此导体是>99% 的液态金属（找佡伈扡佡用（扉佡佡佡诽佡佡佡佡佡佡佡佡佡佡佡佡佡佡路作中。然而，在这项工作中，由于Cu 薄膜只有100 nm 厚，因此导体是>99%Otú ọ dị, n'ime ọrụ a, ebe ọ bụ na ihe nkiri Cu dị naanị 100 nm, onye nduzi nwere ihe karịrị 99% mmiri mmiri (site na olu).Ya mere, anyị anaghị atụ anya na Cu ga-enye aka dị ukwuu na njirimara electromechanical nke ndị nduzi.
Mgbanwe a na-ahazi na nguzogide EGaIn/Cu/PDMS na nsogbu na oke 0-70%.Nchegbu kacha erute tupu ọdịda PDMS dara bụ 70% (Fig 9 mgbakwunye).Ntụpọ uhie bụ ụkpụrụ ụkpụrụ nke iwu Puet buru amụma ya.b EGaIn/Cu/PDMS Nnwale nkwụsi ike nkwụsi ike n'oge usoro ịgbatị gbatịa ugboro ugboro.Ejiri eriri 30% mee ihe n'ule cyclic.Oghere dị n'etiti osisi ahụ bụ 0,5 cm.L bụ ogologo mbụ nke EGaIn/Cu/PDMS tupu ịgbatị.
Ihe nha nha (GF) na-egosipụta mmetụta uche nke ihe mmetụta ma kọwaa ya dị ka oke mgbanwe na nguzogide mgbanwe na strain45.GF mụbara site na 1.7 na 10% nsogbu gaa na 2.6 na 70% nsogbu n'ihi mgbanwe geometric nke ígwè.Tụnyere nlele nje ndị ọzọ, uru GF EGaIn/Cu/PDMS dị oke oke.Dị ka ihe mmetụta, ọ bụ ezie na GF ya nwere ike ọ gaghị adị elu, EGaIn/Cu/PDMS na-egosipụta mgbanwe nguzogide siri ike na nzaghachi na mgbama dị ala na oke mkpọtụ.Iji nyochaa nkwụsi ike nkwụsi ike nke EGaIn/Cu/PDMS, a na-enyocha nkwụsi ike eletrik n'oge usoro ịgbatị mgbatị ugboro ugboro na 30% nsogbu.Dị ka e gosiri na fig.6b, mgbe okirikiri ịgbatị 4000 gachara, uru nguzogide dị n'ime 10%, nke nwere ike ịbụ n'ihi nguzobe nke ọnụ ọgụgụ na-aga n'ihu n'oge okirikiri ịgbatị ugboro ugboro46.Ya mere, a kwadoro nkwụsi ike eletrik ogologo oge nke EGaIn / Cu / PDMS dị ka electrode na-agbatị na ntụkwasị obi nke mgbaàmà dị ka ihe nhụsianya.
N'edemede a, anyị na-atụle mma wetting Njirimara nke GaLM na microstructured metal elu nke infiltration kpatara.EGaIn zuru oke wetara mmiri mmiri ozugbo na kọlụm kọlụm na elu igwe pyramidal n'ihu ikuku HCl.Enwere ike ịkọwa nke a ọnụ ọgụgụ dabere na ụdị Wenzel na usoro wicking, nke na-egosi nha nke post-microstructure chọrọ maka wetting wicking-induced.Wetting ozugbo na nhọrọ nke EGaIn, nke elu igwe microstructured na-eduzi, na-eme ka o kwe omume itinye mkpuchi otu n'elu nnukwu ebe wee mepụta usoro igwe mmiri mmiri.Ihe mkpuchi EGaIn mkpuchi Cu/PDMS na-ejigide njikọ eletrik ọbụlagodi mgbe a gbatịchara ya na mgbe usoro ịgbatị gbatịa ugboro ugboro, dịka SEM, EDS, na nha nguzogide ọkụ eletrik kwadoro.Tụkwasị na nke ahụ, nguzogide eletriki nke Cu / PDMS nke ekpuchiri EGaIn na-agbanwe n'ụzọ ziri ezi na ntụkwasị obi n'ụzọ kwekọrọ na eriri etinyere, na-egosi ngwa ya nwere ike dị ka ihe mmetụta.Uru ndị nwere ike inye site na ụkpụrụ wetting metal mmiri mmiri na-akpata site na imbibition bụ ndị a: (1) Enwere ike nweta mkpuchi GaLM na-enweghị ike mpụga;(2) GaLM wetting n'elu microstructure mkpuchi ọla kọpa bụ thermodynamic.ihe nkiri GaLM na-esi na ya pụta kwụsiri ike ọbụna n'okpuru nrụrụ;(3) ịgbanwe ịdị elu nke kọlụm mkpuchi ọla kọpa nwere ike ịmepụta ihe nkiri GaLM nke nwere oke njikwa.Tụkwasị na nke a, usoro a na-ebelata ego GaLM dị mkpa iji mepụta ihe nkiri ahụ, dịka ogidi ndị ahụ na-etinye akụkụ nke ihe nkiri ahụ.Dịka ọmụmaatụ, mgbe e webatara ọtụtụ ogidi ndị nwere dayameta nke 200 μm (nke dị anya n'etiti ogidi 25 μm), olu GaLM chọrọ maka ịmepụta ihe nkiri (~ 9 μm3 / μm2) dị ka ụda ihe nkiri na-enweghị. ogidi.(25 µm3/µm2).Otú ọ dị, na nke a, a ghaghị iburu n'uche na nkwụsi ike nke usoro iwu, nke e mere atụmatụ dịka iwu Puet si kwuo, na-abawanye ugboro itoolu.N'ozuzu, ihe pụrụ iche nke mmiri mmiri mmiri a tụlere n'isiokwu a na-enye ụzọ dị mma iji tinye ọla mmiri mmiri na ihe dị iche iche maka ngwa eletrọnịkị na-agbatị na ngwa ndị ọzọ na-apụta.
A kwadebere ihe ndị PDMS site na ịgwakọta Sylgard 184 matrix (Dow Corning, USA) na ike siri ike na nha nke 10: 1 na 15: 1 maka ule nkwụsị, na-esote ya na-agwọ ya na oven na 60 ° C.A na-edebe ọla kọpa ma ọ bụ silicon na silicon wafers (Silicon Wafer, Namkang High Technology Co., Ltd., Republic of Korea) na PDMS substrates nwere 10 nm ọkpụrụkpụ titanium nrapado oyi akwa na-eji a omenala sputtering usoro.A na-edobe kọlụm na ihe owuwu pyramidal na mkpụrụ PDMS site na iji usoro fotolithographic silicon wafer.Obosara na ịdị elu nke ụkpụrụ pyramidal bụ 25 na 18 µm, n'otu n'otu.Edobere ịdị elu nke ụkpụrụ mmanya ahụ na 25 µm, 10 µm, na 1 µm, na dayameta na pitch ya dịgasị iche site na 25 ruo 200 µm.
A na-atụle akụkụ kọntaktị nke EGaIn (gallium 75.5% / indium 24.5%,> 99.99%, Sigma Aldrich, Republic of Korea) site na iji nyocha ihe nleba anya (DSA100S, KRUSS, Germany). A na-atụle akụkụ kọntaktị nke EGaIn (gallium 75.5% / indium 24.5%,> 99.99%, Sigma Aldrich, Republic of Korea) site na iji nyocha ihe nleba anya (DSA100S, KRUSS, Germany). Краевой угол EGaIn (галлий 75,5 % / индий 24,5 %, >99,99 %, Sigma Aldrich, Республика Корея) (DSA100S, KRUSS, Германия). A na-atụle akụkụ nsọtụ nke EGaIn (gallium 75.5% / indium 24.5%,> 99.99%, Sigma Aldrich, Republic of Korea) site na iji nyocha droplet (DSA100S, KRUSS, Germany). EGaIn（镓75.5%/铟24.5%，>99.99%，Sigma Aldrich，大韩民国）的接触角使用滴形分析仪／DSA100S）律民国） EGaIn (gallium75.5%/indium24.5%,>99.99%, Sigma Aldrich, 大韩民国) tụrụ site na iji kọntaktị analyzer (DSA100S, KRUSS, Germany). Краевой угол EGaIn (галлий 75,5%/индий 24,5%,>99,99%, Sigma Aldrich, Республика Корея) 100S, KRUSS, Германия). A tụrụ akụkụ ihu nke EGaIn (gallium 75.5% / indium 24.5%,> 99.99%, Sigma Aldrich, Republic of Korea) site na iji nyocha okpu udi (DSA100S, KRUSS, Germany).Tinye mkpụrụ n'ime ụlọ iko 5 cm × 5 cm × 5 cm wee tinye 4-5 μl nke EGaIn n'elu mkpụrụ ahụ site na iji sirinji dayameta 0.5 mm.Iji mepụta HCl vapor medium, 20 μL nke HCl ngwọta (37 wt.%, Samchun Chemicals, Republic of Korea) ka etinyere n'akụkụ mkpụrụ osisi ahụ, nke a na-ekpochapụ nke ọma iji mejupụta ụlọ n'ime 10 s.
E sere onyinyo elu ahụ site na iji SEM (Tescan Vega 3, Tescan Korea, Republic of Korea).EDS (Tescan Vega 3, Tescan Korea, Republic of Korea) ka ejiri mụọ nyocha na nkesa qualitative elemental.A na-enyocha elu elu EGaIn/Cu/PDMS site na iji profilometer anya (The Profilm3D, Filmetrics, USA).
Iji nyochaa mgbanwe nke eletriki eletrik n'oge usoro ịgbatị, a na-ejikọta ihe atụ ndị nwere ma na-enweghị EGaIn na ngwá ọrụ na-agbatị (Bending & Stretchable Machine System, SnM, Republic of Korea) ma jikọọ ya na igwe eletrik Keithley 2400. Iji nyochaa mgbanwe nke eletriki eletrik n'oge usoro ịgbatị, a na-ejikọta ihe atụ ndị nwere ma na-enweghị EGaIn na ngwá ọrụ na-agbatị (Bending & Stretchable Machine System, SnM, Republic of Korea) ma jikọọ ya na igwe eletrik Keithley 2400. Для исследования изменения эlektroprovodnosti время циклов растяжения с EGaIn na ndị na-ege ntị жения (Bending & Stretchable Machine System, SnM, Республика Корея) na эlektrychesky podklyuchali na Keithley 2400. Iji mụọ mgbanwe nke eletriki eletrik n'oge usoro ịgbatị, a na-etinye ihe atụ ndị nwere ma na-enweghị EGaIn n'elu ngwá ọrụ na-agbatị (Bending & Stretchable Machine System, SnM, Republic of Korea) na eletrik ejikọrọ na Keithley 2400 mita isi iyi.Iji mụọ mgbanwe nke eletriki eletrik n'oge usoro ịgbatị, a na-etinye ihe atụ ndị nwere ma na-enweghị EGaIn na ngwaọrụ na-agbatị (Bending and Stretching Machine Systems, SnM, Republic of Korea) na ọkụ eletrik jikọọ na Keithley 2400 SourceMeter.Na-atụ ngbanwe nke nguzogide na oke site na 0% ruo 70% nke ụdị nlele.Maka ule nkwụsi ike, a tụrụ mgbanwe na nguzogide n'elu 4000 30% cycles strain.
Maka ozi ndị ọzọ gbasara nhazi ọmụmụ, hụ ihe ọmụmụ ihe okike jikọtara na edemede a.
A na-ewepụta data na-akwado nsonaazụ ọmụmụ a na Ozi Mgbakwụnye na faịlụ Raw Data.Edemede a na-enye data izizi.
Daeneke, T. et al.Ọla Liquid: Ndabere kemịkalụ na ngwa.Chemical.ọha mmadụ.47, 4073–4111 (2018).
Lin, Y., Genzer, J. & Dickey, MD Àgwà, mmepụta, na ngwa nke gallium mmiri mmiri metal ahụ. Lin, Y., Genzer, J. & Dickey, MD Àgwà, imepụta, na ngwa nke gallium mmiri mmiri metal ahụ.Lin, Y., Genzer, J. na Dickey, MD Properties, imepụta na ngwa nke gallium mmiri mmiri metal ahụ. Lin, Y., Genzer, J. & Dickey, MD 镓基液态金属颗粒的属性、制造和应用。 Lin, Y., Genzer, J. & Dickey, MDLin, Y., Genzer, J. na Dickey, MD Properties, imepụta na ngwa nke gallium mmiri mmiri metal ahụ.Sayensị dị elu.7, 2000–192 (2020).
Koo, HJ, So, JH, Dickey, MD & Velev, OD N'ebe sekit okwu dị nro niile: ụdị ngwaọrụ mmiri mmiri mmiri nwere njirimara memristor. Koo, HJ, Ya mere, JH, Dickey, MD & Velev, OD N'ebe sekit okwu dị nro niile: ụdị ngwaọrụ mmiri mmiri mmiri nwere njirimara memristor.Koo, HJ, So, JH, Dickey, MD, na Velev, OD Na sekit ndị mejupụtara kpamkpam nke okwu dị nro: Ụdị nke ngwaọrụ mmiri mmiri na-enweghị atụ nwere njirimara memristor. Koo, HJ, So, JH, Dickey, MD & Velev, OD 走向全软物质电路：具有忆阻器特性的准液体设备原型。 Koo, HJ, So, JH, Dickey, MD & Velev, ODKoo, HJ, Ya mere, JH, Dickey, MD, na Velev, OD n'ebe sekit niile dị nro: Ụdị ngwaọrụ Quasi-Fluid nwere Memristor Properties.Advanced alma mater.23, 3559–3564 (2011).
Bilodeau, RA, Zemlyanov, DY & Kramer, RK Liquid metal switches maka eletrọnịkị na-anabata gburugburu ebe obibi. Bilodeau, RA, Zemlyanov, DY & Kramer, RK Liquid metal switches maka eletrọnịkị na-anabata gburugburu ebe obibi.Bilodo RA, Zemlyanov D.Yu., Kramer RK Liquid metal switches maka eletrọnkị enyi na enyi na gburugburu ebe obibi. Bilodeau, RA, Zemlyanov, DY & Kramer, RK 用于环境响应电子产品的液态金属开关。 Bilodeau, RA, Zemlyanov, DY & Kramer, RKBilodo RA, Zemlyanov D.Yu., Kramer RK Liquid metal switches maka eletrọnkị enyi na enyi na gburugburu ebe obibi.Advanced alma mater.Ọnụ ụzọ 4, 1600913 (2017).
Ya mere, JH, Koo, HJ, Dickey, MD & Velev, OD Ionic mmezi ugbu a na diodes dị nro nwere electrodes mmiri-igwe. Ya mere, JH, Koo, HJ, Dickey, MD & Velev, OD Ionic mmezi ugbu a na diodes dị nro na electrodes mmiri-igwe. Таk, JH, Koo, HJ, Dickey, MD & Velev, OD Ya mere, JH, Koo, HJ, Dickey, MD & Velev, OD Ionic mmezi ugbu a na diodes ihe dị nro na electrodes metal mmiri mmiri. Ya mere, JH, Koo, HJ, Dickey, MD & Velev, OD 带液态金属电极的软物质二极管中的离子电流整流。 Yabụ, JH, Koo, HJ, Dickey, MD & Velev, OD Таk, JH, Koo, HJ, Dickey, MD & Velev, OD Ya mere, JH, Koo, HJ, Dickey, MD & Velev, OD Ionic mmezi ugbu a na diodes ihe dị nro na electrodes metal mmiri mmiri.Ike agbatịgoro.onye nkuzi.22, 625–631 (2012).
Kim, M.-G., Brown, DK & Brand, O. Nanofabrication maka ngwaọrụ eletrọnịkị niile dị nro na nke dị elu dabere na igwe mmiri mmiri. Kim, M.-G., Brown, DK & Brand, O. Nanofabrication maka ngwaọrụ eletrọnịkị niile dị nro na nke dị elu dabere na igwe mmiri mmiri.Kim, M.-G., Brown, DK na Brand, O. Nanofabrication maka ngwaọrụ eletrọnịkị nke na-eme ka ọla dị nro dị elu ma dị elu.Kim, M.-G., Brown, DK, na Brand, O. Nanofabrication nke nnukwu njupụta, ihe niile dị nro na-adabere na ígwè mmiri mmiri.Nzukọ mba.11, 1–11 (2020).
Guo, R. et al.Cu-EGaIn bụ shei eletrọn nwere ike ịpụpụ maka ngwa eletrọnịkị mmekọrịta yana mpaghara CT.onye nkuzi.Ọkwa.7. 1845–1853 (2020).
Lopes, PA, Paisana, H., De Almeida, AT, Majidi, C. & Tavakoli, M. Hydroprinted electronics: ultrathin stretchable Ag-In-Ga E-skin maka bioelectronics na mmadụ-igwe mmekọrịta. Lopes, PA, Paisana, H., De Almeida, AT, Majidi, C. & Tavakoli, M. Hydroprinted electronics: ultrathin stretchable Ag-In-Ga E-skin maka bioelectronics na mmadụ-igwe mmekọrịta.Lopez, PA, Paysana, H., De Almeida, AT, Majidi, K., na Tawakoli, M. Hydroprinting Electronics: Ag-In-Ga Ultrathin Stretchable Electronic Skin for Bioelectronics and Human-Machine Interaction. Lopes, PA, Paisana, H., De Almeida, AT, Majidi, C. & Tavakoli, M. Hydroprinted electronics: ultrathin stretchable Ag-In-Ga E-skin maka bioelectronics na mmadụ-igwe mmekọrịta. Lopes, PA, Paisana, H., De Almeida, AT, Majidi, C. & Tavakoli, M. Hydroprinted electronics: ultrathin stretchable Ag-In-Ga E-skin maka bioelectronics na mmadụ-igwe mmekọrịta.Lopez, PA, Paysana, H., De Almeida, AT, Majidi, K., na Tawakoli, M. Hydroprinting Electronics: Ag-In-Ga Ultrathin Stretchable Electronic Skin for Bioelectronics and Human-Machine Interaction.ACS
Yang, Y. et al.Ultra-tensile na engineered triboelectric nanogenerators dabere na mmiri mmiri ọla maka wearable eletrọnịkị.SAU Nano 12, 2027–2034 (2018).
Gao, K. et al.Mmepe nke ihe owuwu microchannel maka sensọ overstretch dabere na ọla mmiri na-ekpo ọkụ n'ime ụlọ.sayensị.Akụkọ 9, 1–8 (2019).
Chen, G. et al.EGaIn superelastic fiber composite fibers nwere ike iguzogide nsogbu tensile 500% ma nwee ezigbo ọkụ eletrik maka ngwa eletrọnịkị wearable.ACS na-ezo aka na alma mater.Ọnụ ụzọ 12, 6112–6118 (2020).
Kim, S., Oh, J., Jeong, D. & Bae, J. Direct wiring nke eutectic gallium–indium na a metal electrode maka nro sensọ sistem. Kim, S., Oh, J., Jeong, D. & Bae, J. Direct wiring nke eutectic gallium–indium na a metal electrode maka nro sensọ sistem.Kim, S., Oh, J., Jeon, D. na Bae, J. Direct bonding nke eutectic gallium-indium na metal electrodes maka nro sensing usoro. Kim, S., Oh, J., Jeong, D. & Bae, J. 将共晶镓-铟直接连接到软传感器系统的金属电极。 Kim, S., Oh, J., Jeong, D. & Bae, J. 就共晶gallium-indium metal electrode jikọtara ya na sistemụ ihe mmetụta dị nro.Kim, S., Oh, J., Jeon, D. na Bae, J. Direct bonding nke eutectic gallium-indium na metal electrodes maka nro sensọ usoro.ACS na-ezo aka na alma mater.Ọnụ ụzọ 11, 20557–20565 (2019).
Yun, G. et al.Igwe mmiri magnetoheological elastomers jupụtara na igwe nwere piezoelectricity dị mma.Nzukọ mba.10, 1–9 (2019).
Kim, KK nwere mmetụta dị ukwuu ma nwee ike ịgbatị gauges nwere percolation grids nke anisotropic metal nanowires prestressed.Nanolet.15, 5240–5247 (2015).
Guo, H., Han, Y., Zhao, W., Yang, J. & Zhang, L. Elastomer na-agwọ onwe ya na-ahụ maka onwe ya nke nwere oke ogologo ogologo. Guo, H., Han, Y., Zhao, W., Yang, J. & Zhang, L. Elastomer na-agwọ onwe ya na-ahụ maka onwe ya nke nwere oke ogologo ogologo.Guo, H., Han, Yu., Zhao, W., Yang, J., na Zhang, L. Versatile onwe-agwọ ọrịa elastomer na elu elasticity. Guo, H., Han, Y., Zhao, W., Yang, J. & Zhang, L. 具有高拉伸性的通用自主自愈弹性体。 Guo, H., Han, Y., Zhao, W., Yang, J. & Zhang, L.Guo H., Han Yu, Zhao W., Yang J. na Zhang L. Versatile na-agwọ onwe ya na-agwọ onwe ya dị elu.Nzukọ mba.11, 1–9 (2020).
Zhu X. et al.Ultradrawn dara eme emep uta eri na-eji mmiri mmiri metal alloy cores.Ike agbatịgoro.onye nkuzi.23, 2308–2314 (2013).
Khan, J. et al.Ọmụmụ nke ịpị electrochemical nke waya metal mmiri mmiri.ACS na-ezo aka na alma mater.Ọnụ ụzọ 12, 31010–31020 (2020).
Lee H. et al.Mmụba igwe na-akpata nsị nke igwe mmiri mmiri nwere bionanofibers maka mmegharị eletrik na-agbanwe agbanwe na mmeghachi omume.Nzukọ mba.10, 1–9 (2019).
Dickey, MD et al.Eutectic gallium-indium (EGaIn): metal alloy mmiri mmiri na-eji na-emepụta ihe kwụsiri ike na microchannels na ụlọ okpomọkụ.Ike agbatịgoro.onye nkuzi.18, 1097–1104 (2008).
Wang, X., Guo, R. & Liu, J. Robotics dị nro dabere na metal Liquid: ihe, atụmatụ na ngwa. Wang, X., Guo, R. & Liu, J. Robotics dị nro dabere na metal Liquid: ihe, atụmatụ na ngwa.Wang, X., Guo, R. na Liu, J. Robotics Soft dabeere na mmiri mmiri: ihe, ihe owuwu na ngwa. Wang, X., Guo, R. & Liu, J. 基于液态金属的软机器人：材料、设计和应用。 Wang, X., Guo, R. & Liu, J. Robots dị nro dabere na metal Liquid: ihe, imewe na ngwa.Wang, X., Guo, R. na Liu, J. Robots dị nro dabere na igwe mmiri mmiri: ihe, ihe owuwu na ngwa.Advanced alma mater.teknụzụ 4, 1800549 (2019).